Renesas NP28N10SDE-E1-AY

NP28N10SDE-E1-AY - MOS FIELD EFF

Manufacturer: Renesas
Manufacturer's number: Renesas NP28N10SDE-E1-AY
Package: Bulk
Datasheet: PDF
Stock: 2
SKU: NP28N10SDE-E1-AY
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Unit Price: $1.3400

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Details

Parameters
Mfr	Renesas
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	52mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta), 100W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (MP-3ZK)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	RoHS non-compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-NP28N10SDE-E1-AY
Standard Package	1

N-Channel 100 V 28A (Tc) 1.2W (Ta), 100W (Tc) Surface Mount TO-252 (MP-3ZK)