Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
16A (Ta), 35A(Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
Rds On (Max) @ Id, Vgs |
7.5mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
12 nC @ 5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1200 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
3W (Ta), 28W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-HSOP |
Package / Case |
8-SOIC (0.173", 4.40mm Width) Exposed Pad |
Other Names |
2156-UPA2701TP-E1-AZ |
Standard Package |
1 |
N-Channel 30 V 16A (Ta), 35A(Tc) 3W (Ta), 28W (Tc) Surface Mount 8-HSOP