| Parameters |
| Mfr |
Rohm Semiconductor |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
600 V |
| Current - Continuous Drain (Id) @ 25°C |
70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
15V |
| Rds On (Max) @ Id, Vgs |
58mOhm @ 35A, 15V |
| Vgs(th) (Max) @ Id |
7V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs |
165 nC @ 15 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
6000 pF @ 100 V |
| FET Feature |
- |
| Power Dissipation (Max) |
770W (Tc) |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247G |
| Package / Case |
TO-247-3 |
| Base Product Number |
R6070 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
846-R6070JNZ4C13 |
| Standard Package |
30 |
N-Channel 600 V 70A (Tc) 770W (Tc) Through Hole TO-247G