| Parameters |
| Mfr |
Rohm Semiconductor |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
650 V |
| Current - Continuous Drain (Id) @ 25°C |
70A (Tc) |
| Rds On (Max) @ Id, Vgs |
39mOhm @ 27A, 18V |
| Vgs(th) (Max) @ Id |
5.6V @ 13.3mA |
| Gate Charge (Qg) (Max) @ Vgs |
104 nC @ 18 V |
| Vgs (Max) |
+22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds |
1526 pF @ 500 V |
| FET Feature |
- |
| Power Dissipation (Max) |
267W |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-263-7 |
| Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Base Product Number |
SCT3030 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1,000 |
N-Channel 650 V 70A (Tc) 267W Surface Mount TO-263-7