Parameters | |
---|---|
Mfr | Rohm Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 750 V |
Current - Continuous Drain (Id) @ 25°C | 105A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 16.9mOhm @ 58A, 18V |
Vgs(th) (Max) @ Id | 4.8V @ 30.8mA |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
Vgs (Max) | +21V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 4580 pF @ 500 V |
FET Feature | - |
Power Dissipation (Max) | 312W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 846-SCT4013DEC11 |
Standard Package | 30 |