| Parameters |
| Mfr |
Sanken |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
12.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
45 nC @ 10 V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
2200 pF @ 10 V |
| FET Feature |
- |
| Power Dissipation (Max) |
55W (Tc) |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220-3 |
| Package / Case |
TO-220-3 |
| Base Product Number |
EKG10 |
| RoHS Status |
RoHS Compliant |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
1261-EKG1020 |
| Standard Package |
1,000 |
N-Channel 100 V 20A (Ta) 55W (Tc) Through Hole TO-220-3