Parameters |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN - Darlington |
Current - Collector (Ic) (Max) |
700 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Vce Saturation (Max) @ Ib, Ic |
1.2V @ 100µA, 100mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
5000 @ 50mA, 2V |
Power - Max |
600 mW |
Frequency - Transition |
200MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
3-NP |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-2SD1111-AA-600057 |
Standard Package |
1 |
Mfr |
Sanyo |
Bipolar (BJT) Transistor NPN - Darlington 50 V 700 mA 200MHz 600 mW Through Hole 3-NP