SemiQ GCMS080B120S1-E1

SIC 1200V 80M MOSFET & 10A SBD S

Manufacturer: SemiQ
Manufacturer's number: SemiQ GCMS080B120S1-E1
Package: Tube
Datasheet: PDF
Stock: 75
SKU: GCMS080B120S1-E1
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Unit Price: $25.9600

Ext Price: $25.9600

Details

Parameters
Mfr	SemiQ
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	58 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1374 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	142W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC
Base Product Number	GCMS080
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1560-GCMS080B120S1-E1
Standard Package	10

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227