SemiQ GP2T040A120H

SIC MOSFET 1200V 40M TO-247-4L

Manufacturer: SemiQ
Manufacturer's number: SemiQ GP2T040A120H
Package: Tube
Datasheet: PDF
Stock: 75
SKU: GP2T040A120H
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Unit Price: $21.2800

Ext Price: $21.2800

Details

Parameters
Mfr	SemiQ
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	118 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3192 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	322W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1560-GP2T040A120H
Standard Package	30

N-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-4