Infineon Technologies IRLL2705PBF

IRLL2705PBF

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRLL2705PBF
Package: Tube
Datasheet: PDF
Stock: 5732
SKU: IRLL2705PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	40mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	80

N-Channel 55 V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223