| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Tape & Box (TB) |
| Product Status |
Obsolete |
| Transistor Type |
NPN - Darlington |
| Current - Collector (Ic) (Max) |
1 A |
| Voltage - Collector Emitter Breakdown (Max) |
50 V |
| Vce Saturation (Max) @ Ib, Ic |
1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
4000 @ 1A, 5V |
| Power - Max |
1 W |
| Frequency - Transition |
1GHz |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Supplier Device Package |
TO-92 (TO-226) |
| Base Product Number |
MPS672 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0075 |
| Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN - Darlington 50 V 1 A 1GHz 1 W Through Hole TO-92 (TO-226)