| Parameters |
| Mfr |
onsemi |
| Series |
QFET® |
| Package |
Tube |
| Product Status |
Obsolete |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
400 V |
| Current - Continuous Drain (Id) @ 25°C |
2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
6.5Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
13 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
350 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
63W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220-3 |
| Package / Case |
TO-220-3 |
| Base Product Number |
FQP2 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
50 |
P-Channel 400 V 2A (Tc) 63W (Tc) Through Hole TO-220-3