STMicroelectronics SCTH35N65G2V-7

SCTH35N65G2V-7

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTH35N65G2V-7
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3774
SKU: SCTH35N65G2V-7
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $16.0100

Ext Price: $16.0100

Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number	SCTH35
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTH35N65G2V-7TR
Standard Package	1,000

N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7