Parameters |
Mfr |
STMicroelectronics |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
40A (Tc) |
Rds On (Max) @ Id, Vgs |
67mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id |
5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
73 nC @ 20 V |
Vgs (Max) |
+22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
1370 pF @ 400 V |
FET Feature |
- |
Power Dissipation (Max) |
417W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerFlat™ (8x8) HV |
Package / Case |
8-PowerVDFN |
Base Product Number |
SCTL35 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
497-SCTL35N65G2VTR |
Standard Package |
3,000 |
N-Channel 650 V 40A (Tc) 417W (Tc) Surface Mount PowerFlat™ (8x8) HV