STMicroelectronics SCTL90N65G2V

SILICON CARBIDE POWER MOSFET 650

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTL90N65G2V
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3547
SKU: SCTL90N65G2V
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Unit Price: $37.2700

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Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	935W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerFlat™ (8x8) HV
Package / Case	8-PowerVDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTL90N65G2VTR
Standard Package	3,000

N-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV