STMicroelectronics SCTW100N65G2AG

SCTW100N65G2AG

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTW100N65G2AG
Package: Tube
Datasheet: PDF
Stock: 6017
SKU: SCTW100N65G2AG
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Unit Price: $37.7600

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Details

Parameters
Mfr	STMicroelectronics
Series	Automotive, AEC-Q101
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	162 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3315 pF @ 520 V
FET Feature	-
Power Dissipation (Max)	420W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW100
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTW100N65G2AG
Standard Package	30

N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™