STMicroelectronics SCTW35N65G2VAG

SCTW35N65G2VAG

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTW35N65G2VAG
Package: Tube
Datasheet: PDF
Stock: 3715
SKU: SCTW35N65G2VAG
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Unit Price: $19.4800

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Details

Parameters
Mfr	STMicroelectronics
Series	Automotive, AEC-Q101
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	240W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW35
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTW35N65G2VAG
Standard Package	30

N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™