STMicroelectronics SCTW40N120G2V

SILICON CARBIDE POWER MOSFET 120

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTW40N120G2V
Package: Tube
Datasheet: PDF
Stock: 8842
SKU: SCTW40N120G2V
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Unit Price: $21.6100

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Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1233 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTW40N120G2V
Standard Package	30

N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™