STMicroelectronics SCTW60N120G2

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Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTW60N120G2
Package: Bulk
Datasheet: -
Stock: 3701
SKU: SCTW60N120G2
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Unit Price: $31.9300

Ext Price: $31.9300

Details

Parameters
FET Feature	-
Power Dissipation (Max)	389W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW60
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTW60N120G2
Standard Package	600
Mfr	STMicroelectronics
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 8 V
Vgs (Max)	+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V

N-Channel 1200 V 60A (Tc) 389W (Tc) Through Hole HiP247™