STMicroelectronics SCTWA90N65G2V-4

TRANS SJT N-CH 650V 119A HIP247

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics SCTWA90N65G2V-4
Package: Tube
Datasheet: PDF
Stock: 2333
SKU: SCTWA90N65G2V-4
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Unit Price: $38.0100

Ext Price: $38.0100

Details

Parameters
Mfr	STMicroelectronics
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	119A (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	565W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™ Long Leads
Package / Case	TO-247-3
Base Product Number	SCTWA90
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-SCTWA90N65G2V-4
Standard Package	30

N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads