STMicroelectronics STI33N60M6

MOSFET N-CH 600V 25A I2PAK

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics STI33N60M6
Package: Tube
Datasheet: PDF
Stock: 3668
SKU: STI33N60M6
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Details

Parameters
Input Capacitance (Ciss) (Max) @ Vds	1515 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	STI33
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-STI33N60M6
Standard Package	1,000
Mfr	STMicroelectronics
Series	MDmesh™ M6
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33.4 nC @ 10 V
Vgs (Max)	±25V

N-Channel 600 V 25A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)