STMicroelectronics STW70N65DM6-4

STW70N65DM6-4

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics STW70N65DM6-4
Package: Tube
Datasheet: PDF
Stock: 4786
SKU: STW70N65DM6-4
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Unit Price: $14.4100

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Details

Parameters
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id	4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	125 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	4900 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	450W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
Base Product Number	STW70
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-STW70N65DM6-4
Standard Package	30
Mfr	STMicroelectronics
Series	Automotive, AEC-Q101
Package	Tube
Product Status	Active

N-Channel 650 V 68A (Tc) 450W (Tc) Through Hole TO-247-4