Infineon Technologies IRF7832Z

IRF7832Z

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRF7832Z
Package: Tube
Datasheet: PDF
Stock: 4839
SKU: IRF7832Z
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3860 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001554428
Standard Package	95

N-Channel 30 V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO