Taiwan Semiconductor Corporation TSM060NB06LCZ

60V, 111A, SINGLE N-CHANNEL POWE

Manufacturer: Taiwan Semiconductor Corporation
Manufacturer's number: Taiwan Semiconductor Corporation TSM060NB06LCZ
Package: Tube
Datasheet: PDF
Stock: 3363
SKU: TSM060NB06LCZ
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Details

Parameters
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6273 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TSM060
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1801-TSM060NB06LCZ
Standard Package	4,000

N-Channel 60 V 13A (Ta), 111A (Tc) 2W (Ta), 156W (Tc) Through Hole TO-220