Taiwan Semiconductor Corporation TSM2NB60CH

600V, 2A, SINGLE N-CHANNEL POWER

Manufacturer: Taiwan Semiconductor Corporation
Manufacturer's number: Taiwan Semiconductor Corporation TSM2NB60CH
Package: Tube
Datasheet: PDF
Stock: 5694
SKU: TSM2NB60CH
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $0.8512

Ext Price: $0.8512

Details

Parameters
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	249 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number	TSM2
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1801-TSM2NB60CH
Standard Package	15,000

N-Channel 600 V 2A (Tc) 44W (Tc) Through Hole TO-251 (IPAK)