Parameters |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
500 V |
Current - Continuous Drain (Id) @ 25°C |
5A (Tc) |
Rds On (Max) @ Id, Vgs |
1.5Ohm @ 1.6A, 10V |
Vgs(th) (Max) @ Id |
3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
16 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
603 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
42W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220 |
Package / Case |
TO-220-3 |
Base Product Number |
TSM5 |
RoHS Status |
ROHS3 Compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
1801-TSM5ND50CI |
Standard Package |
4,000 |
Mfr |
Taiwan Semiconductor Corporation |
Series |
- |
N-Channel 500 V 5A (Tc) 42W (Tc) Through Hole TO-220