Taiwan Semiconductor Corporation TSM60NC196CI

600V, 20A, SINGLE N-CHANNEL POWE

Manufacturer: Taiwan Semiconductor Corporation
Manufacturer's number: Taiwan Semiconductor Corporation TSM60NC196CI
Package: Tube
Datasheet: PDF
Stock: 4242
SKU: TSM60NC196CI
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Details

Parameters
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1535 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	70W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220
Package / Case	TO-220-3 Full Pack, Isolated Tab
Base Product Number	TSM60
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1801-TSM60NC196CI
Standard Package	4,000

N-Channel 600 V 20A (Tc) 70W (Tc) Through Hole ITO-220