Infineon Technologies IRF6636

IRF6636

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRF6636
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 7640
SKU: IRF6636
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Details

Parameters
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2420 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	2.2W (Ta), 42W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ ST
Package / Case	DirectFET™ Isometric ST
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,800
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tape & Reel (TR)
Product Status	Obsolete

N-Channel 20 V 18A (Ta), 81A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST