Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Box |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1.5 A |
Voltage - Collector Emitter Breakdown (Max) |
375 V |
Vce Saturation (Max) @ Ib, Ic |
900mV @ 100mA, 800mA |
Current - Collector Cutoff (Max) |
50µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 100mA, 5V |
Power - Max |
1.1 W |
Frequency - Transition |
- |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-251-3 Stub Leads, IPak |
Supplier Device Package |
PW-MOLD2 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
264-2SC6142(Q) |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 375 V 1.5 A 1.1 W Through Hole PW-MOLD2