Toshiba Semiconductor and Storage HN4B102J(TE85L,F) - Toshiba Semiconductor and Storage Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage HN4B102J(TE85L,F)

PB-F POWER TRANSISTOR SMV MOQ=30

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage HN4B102J(TE85L,F)
  • Package: Tape & Reel (TR)
  • Datasheet: PDF
  • Stock: 8759
  • SKU: HN4B102J(TE85L,F)
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.6100

Ext Price: $0.6100

Details

Tags

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 200mA, 2V
Power - Max 750mW
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Supplier Device Package SMV
Base Product Number HN4B102
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 3,000
Bipolar (BJT) Transistor Array NPN, PNP 30V 1.8A, 2A 750mW Surface Mount SMV