Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
12 V |
Current - Continuous Drain (Id) @ 25°C |
13.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
2.75mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id |
1.4V @ 1.11mA |
Gate Charge (Qg) (Max) @ Vgs |
25 nC @ 4 V |
Vgs (Max) |
±8V |
FET Feature |
- |
Power Dissipation (Max) |
800mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
TCSPAC-153001 |
Package / Case |
10-SMD, No Lead |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
10,000 |
N-Channel 12 V 13.5A (Ta) 800mW (Ta) Surface Mount TCSPAC-153001