Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
1.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
Rds On (Max) @ Id, Vgs |
240mOhm @ 650mA, 10V |
Vgs(th) (Max) @ Id |
2.6V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
137 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
UFM |
Package / Case |
3-SMD, Flat Leads |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
3,000 |
P-Channel 30 V 1.4A (Ta) 500mW (Ta) Surface Mount UFM