Toshiba Semiconductor and Storage SSM3J168F,LXHF

SMOS LOW RON VDS:-60V VGSS:+10/-

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM3J168F,LXHF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 5
SKU: SSM3J168F,LXHF
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Unit Price: $0.4300

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	1.55Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	S-Mini
Package / Case	TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

P-Channel 60 V 400mA (Ta) 600mW (Ta) Surface Mount S-Mini