Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.5V, 4V |
Rds On (Max) @ Id, Vgs |
48mOhm @ 2A, 4V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
5.9 nC @ 4 V |
Vgs (Max) |
±10V |
Input Capacitance (Ciss) (Max) @ Vds |
400 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
UFM |
Package / Case |
3-SMD, Flat Leads |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
264-SSM3K121TU |
Standard Package |
1 |
N-Channel 20 V 3.2A (Ta) 500mW (Ta) Surface Mount UFM