Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
Automotive, AEC-Q101, U-MOSVII-H |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
800mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.2V, 4.5V |
Rds On (Max) @ Id, Vgs |
57mOhm @ 800mA, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
2 nC @ 4.5 V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
177 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
500mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
UFM |
Package / Case |
3-SMD, Flat Lead |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
3,000 |
N-Channel 20 V 800mA (Ta) 500mW (Ta) Surface Mount UFM