Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
Automotive, AEC-Q101 |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
Rds On (Max) @ Id, Vgs |
35mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id |
2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
24.2 nC @ 10 V |
Vgs (Max) |
+10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds |
1020 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
1.5W (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-TSOP-F |
Package / Case |
6-SMD, Flat Leads |
Base Product Number |
SSM6J808 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
P-Channel 40 V 7A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F