Toshiba Semiconductor and Storage SSM6K809R,LF

SMALL SIGNAL MOSFET N-CH VDSS=60

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6K809R,LF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3570
SKU: SSM6K809R,LF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	36mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP-F
Package / Case	6-SMD, Flat Leads
Base Product Number	SSM6K809
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F