Toshiba Semiconductor and Storage SSM6N62TU,LXHF

SMOS LOW RON DUAL NCH ID:0.8A, V

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6N62TU,LXHF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1
SKU: SSM6N62TU,LXHF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Rds On (Max) @ Id, Vgs	85mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	177pF @ 10V
Power - Max	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	UF6
Base Product Number	SSM6N62
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

Mosfet Array 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6