Toshiba Semiconductor and Storage SSM6N813R,LF

SMALL SIGNAL MOSFET DUAL N-CH VD

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6N813R,LF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8
SKU: SSM6N813R,LF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Rds On (Max) @ Id, Vgs	112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	242pF @ 15V
Power - Max	1.5W (Ta)
Operating Temperature	175°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	6-TSOP-F
Base Product Number	SSM6N813
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

Mosfet Array 100V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F