Toshiba Semiconductor and Storage TJ20A10M3(STA4,Q

TJ20A10M3(STA4,Q

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TJ20A10M3(STA4,Q
Package: Tube
Datasheet: -
Stock: 3719
SKU: TJ20A10M3(STA4,Q
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tube
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TJ20A10
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TJ20A10M3(STA4Q
Standard Package	50

P-Channel 100 V 20A (Ta) 35W (Tc) Through Hole TO-220SIS