Toshiba Semiconductor and Storage TJ9A10M3,S4Q

TJ9A10M3,S4Q

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TJ9A10M3,S4Q
Package: Tube
Datasheet: -
Stock: 4832
SKU: TJ9A10M3,S4Q
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tube
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	19W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TJ9A10
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TJ9A10M3S4Q
Standard Package	50

P-Channel 100 V 9A (Ta) 19W (Tc) Through Hole TO-220SIS