Toshiba Semiconductor and Storage TK16G60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK16G60W5,RVQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1
SKU: TK16G60W5,RVQ
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Details

Parameters
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	230mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id	4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	130W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tape & Reel (TR)
Product Status	Active

N-Channel 600 V 15.8A (Ta) 130W (Tc) Surface Mount D2PAK