Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
DTMOSIV |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
245mOhm @ 7.9A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs |
43 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
1350 pF @ 300 V |
FET Feature |
- |
Power Dissipation (Max) |
139W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
4-DFN-EP (8x8) |
Package / Case |
4-VSFN Exposed Pad |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
2,500 |
N-Channel 600 V 15.8A (Ta) 139W (Tc) Surface Mount 4-DFN-EP (8x8)