Toshiba Semiconductor and Storage TPCC8105,L1Q

PB-F POWER MOSFET TRANSISTOR TSO

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPCC8105,L1Q
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4009
SKU: TPCC8105,L1Q
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Unit Price: $0.8200

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id	2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	76 nC @ 10 V
Vgs (Max)	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.3x3.3)
Package / Case	8-VDFN Exposed Pad
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

P-Channel 30 V 23A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)