Toshiba Semiconductor and Storage TPH2R306NH1,LQ

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPH2R306NH1,LQ
Package: Tape & Reel (TR)
Datasheet: -
Stock: 8
SKU: TPH2R306NH1,LQ
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Unit Price: $1.5700

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	136A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Rds On (Max) @ Id, Vgs	2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6100 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta), 170W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5.75)
Package / Case	8-PowerTDFN
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 60 V 136A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)