Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
U-MOSVIII-H |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
92A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
4.5mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
58 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
5200 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
800mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-SOP Advance (5x5.75) |
Package / Case |
8-PowerTDFN |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
5,000 |
N-Channel 100 V 92A (Tc) 800mW (Ta) Surface Mount 8-SOP Advance (5x5.75)