Toshiba Semiconductor and Storage TPW2900ENH,L1Q - Toshiba Semiconductor and Storage FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage TPW2900ENH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage TPW2900ENH,L1Q
  • Package: Tape & Reel (TR)
  • Datasheet: PDF
  • Stock: 4
  • SKU: TPW2900ENH,L1Q
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $2.9800

Ext Price: $2.9800

Details

Tags

Parameters
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
N-Channel 200 V 33A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance