Toshiba Semiconductor and Storage TTA006B,Q - Toshiba Semiconductor and Storage Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage TTA006B,Q

PB-F POWER TRANSISTOR TO-126N PC

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage TTA006B,Q
  • Package: Tray
  • Datasheet: PDF
  • Stock: 103
  • SKU: TTA006B,Q
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.6200

Ext Price: $0.6200

Details

Tags

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tray
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 230 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 1.5 W
Frequency - Transition 70MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126N
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 264-TTA006BQ
Standard Package 250
Bipolar (BJT) Transistor PNP 230 V 1 A 70MHz 1.5 W Through Hole TO-126N