Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tray |
Product Status |
Active |
Transistor Type |
PNP |
Current - Collector (Ic) (Max) |
2 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 100mA, 1A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 500mA, 2V |
Power - Max |
1.5 W |
Frequency - Transition |
100MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-225AA, TO-126-3 |
Supplier Device Package |
TO-126N |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
250 |
Bipolar (BJT) Transistor PNP 80 V 2 A 100MHz 1.5 W Through Hole TO-126N