Toshiba Semiconductor and Storage TTD1409B,S4X - Toshiba Semiconductor and Storage Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage TTD1409B,S4X

TRANS NPN DARL 400V 20UA TO220

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage TTD1409B,S4X
  • Package: Tube
  • Datasheet: PDF
  • Stock: 14
  • SKU: TTD1409B,S4X
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $1.6000

Ext Price: $1.6000

Details

Tags

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 600 @ 2A, 2V
Power - Max 2 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS
Base Product Number TTD1409
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Bipolar (BJT) Transistor NPN - Darlington 400 V 6 A 2 W Through Hole TO-220SIS